Memory system

ABSTRACT

According to the embodiments, a memory system includes a nonvolatile semiconductor memory and a writing-loop-count monitoring unit that monitors a loop count of an applied voltage to the nonvolatile semiconductor memory required for data writing of the nonvolatile semiconductor memory as a writing loop count. Moreover, the memory system includes a management table for managing the writing loop count in block unit that is a unit of data erasing and a life managing unit that determines a degraded state of the nonvolatile semiconductor memory based on the management table.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. Ser. No. 14/300,784, filedJun. 10, 2014, which is a continuation of U.S. Ser. No. 14/070,020,filed Nov. 1, 2013, which is a continuation of U.S. Ser. No. 12/886,260filed Sep. 20, 2010, now U.S. Pat. No. 8,605,504, issued Dec. 12, 2013,which claims priority under 35 U.S.C. 119 to Japanese Patent ApplicationNo. 2010-27944, filed on Feb. 10, 2010; the entire contents of which areincorporated herein by reference.

FIELD

The present embodiments typically relate to a memory system.

BACKGROUND

A NAND-type flash memory is a semiconductor memory that needs eraseprocessing before performing writing. In writing/erasing of data in theNAND-type flash memory, electrons are injected/removed in/from afloating gate by applying a high voltage between a substrate and acontrol gate. It is known that when the writing/erasing is performedmany times, a gate oxide film around the floating gate is degraded,which adversely affects writing/erasing characteristics closely relatedto a life of the NAND-type flash memory. Therefore, it is desired tocorrectly recognize the life of the NAND-type flash memory.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a configuration diagram illustrating a memory system accordingto a first embodiment;

FIG. 2A is a circuit diagram illustrating an example of a physical blockincluded in a NAND memory chip;

FIG. 2B is a schematic diagram illustrating an example of a thresholddistribution of a memory cell transistor;

FIG. 3 is a configuration diagram illustrating one example of a drivecontrol circuit shown in FIG. 1;

FIG. 4 is a diagram illustrating one example of a NAND-type flash memoryincluded in one chip shown in FIG. 1;

FIG. 5 is a functional block diagram illustrating a functionalconfiguration example of an SSD according to the first embodiment;

FIG. 6 is a diagram illustrating management data of a loop numbermanagement table;

FIG. 7 is a diagram illustrating a relationship between the number oftimes of erasing and an erasing loop count;

FIG. 8 is a time chart illustrating an operation sequence of eraseprocessing;

FIG. 9 is a diagram illustrating a relationship between the number oftimes of rewriting and a page writing loop count;

FIG. 10 is a time chart illustrating an operation sequence of writeprocessing;

FIG. 11 is a time chart illustrating an applying operation of a writevoltage;

FIG. 12 is a flowchart illustrating a life determination processingprocedure of the SSD according to the first embodiment;

FIG. 13 is a diagram illustrating block threshold information used in astate determination of a block;

FIG. 14 is a functional block diagram illustrating a functionalconfiguration example of an SSD according to a second embodiment;

FIG. 15 is a flowchart illustrating a life determination processingprocedure of the SSD according to the second embodiment;

FIG. 16 is a diagram illustrating another configuration example of theloop number management table; and

FIG. 17 is a diagram illustrating block threshold information when thestate determination of a block is performed in two stages.

DETAILED DESCRIPTION

According to embodiments, a memory system includes a nonvolatilesemiconductor memory that includes a plurality of blocks as a unit ofdata erasing. Moreover, the memory system includes a writing-loop-countmonitoring unit that monitors a loop count of an applied voltage to thenonvolatile semiconductor memory required for data writing of thenonvolatile semiconductor memory as a writing loop count. Furthermore,the memory system includes a management table for managing the writingloop count in block unit and a life managing unit that determines adegraded state of the nonvolatile semiconductor memory based on themanagement table.

A memory system according to the embodiments will be explained below indetail with reference to the drawings. The present invention is notlimited to these embodiments.

First Embodiment

In the present embodiment, a loop count of an applied voltage in writingor erasing to a memory cell of a NAND-type flash memory is detected fordetermining a life (degraded state) of an SSD (Solid State Drive) thatincludes the NAND-type flash memory as one example of a nonvolatilesemiconductor memory. The loop count in this example is the number ofpulses (number of voltage applications) of a voltage applied to theNAND-type flash memory in writing or erasing to the NAND-type flashmemory. In writing or erasing, a predetermined voltage is applied to theNAND-type flash memory a plurality of times (for the loop count) whilegradually increasing the voltage.

After detecting the loop count of the applied voltage, the loop count iscompared with a preset setting value (predetermined threshold), and thedegraded state of each block in the NAND-type flash memory is determinedbased on this comparison result. Moreover, the degraded state of the SSD(whole memory system including a plurality of the nonvolatilesemiconductor memories) is determined by using the determination resultof the degraded state. In the following explanation, the NAND-type flashmemory is referred to as a NAND memory.

First, explanation is given for the configuration of the memory systemthat includes the SSD, the configuration of the NAND memory, and thelike with reference to FIG. 1 to FIG. 4, and thereafter, theconfiguration, the operation, and the like of the SSD that are one ofcharacteristics of the present embodiment are explained with referenceto FIG. 5 to FIG. 13.

FIG. 1 is a block diagram illustrating a configuration example of an SSD100A as the memory system. The SSD 100A includes a host connectioninterface (host I/F 40 to be described later) for connecting to a hostdevice (hereinafter, host) 1. FIG. 1 illustrates a case where the hostI/F 40 is a memory connection interface such as an ATA interface (ATAI/F) 2. The SSD 100A is connected to the host 1 such as a personalcomputer and a CPU core via the ATA I/F 2 (the host I/F 40) andfunctions as an external memory of the host 1. The SSD 100A can transmitand receive data to and from a device for debugging and manufactureinspection 200 via a communication interface 3 such as an RS232Cinterface (RS232C I/F).

The SSD 100A includes a NAND-type flash memory (hereinafter, NANDmemory) 20 as the nonvolatile semiconductor memory, a drive controlcircuit 4 as a controller, a DRAM 30 as a volatile semiconductor memory,a power supply circuit 5, a state display LED 6, a temperature sensor 7that detects the temperature in a drive, and a fuse 8.

The power supply circuit 5 generates a plurality of different internaldirect current power-supply voltages from an external direct currentpower supply supplied from a power supply circuit on the host 1 side,and supplies these internal direct current power-supply voltages torespective circuits in the SSD 100A. The power supply circuit 5 detectsa rising edge of an external power supply, generates a power-on resetsignal, and supplies it to the drive control circuit 4.

The fuse 8 is provided between the power supply circuit on the host 1side and the power supply circuit 5 in the SSD 100A. When an overcurrentis supplied from an external power supply circuit, the fuse 8 isdisconnected to prevent malfunction of an internal circuit.

The NAND memory 20, for example, includes four parallel operationelements 20 a to 20 d that perform four parallel operations, and thefour parallel operation elements 20 a to 20 d are connected to the drivecontrol circuit 4 by four channels (ch0 to ch3). Each of the paralleloperation elements 20 a to 20 d includes a plurality of banks capable ofperforming bank interleave. In other words, each parallel operationelement, for example, includes four banks (Bank 0 to Bank 3), and eachbank includes a plurality of NAND memory chips, for example, two memorychips (Chip 0 and Chip 1).

Each memory chip, for example, is divided into two districts of a plane0 and a plane 1 each of which includes a plurality of physical blocks.The plane 0 and the plane 1 include peripheral circuits independent fromeach other (for example, row decoder, column decoder, page buffer, anddata cache) and can perform erasing/writing/reading simultaneously byusing a double speed mode.

In this manner, each NAND memory chip of the NAND memory 20 can performthe parallel operation by a plurality of channels, the bank interleaveoperation by a plurality of banks, the interleave operation by aplurality of chips in the same bank, and the parallel operation by thedouble speed mode by using a plurality of planes. It is applicable thateach memory chip is configured to be divided into two or more planes oris not divided.

The DRAM 30 functions as a data transfer cache, a work area memory, andthe like between the host 1 and the NAND memory 20. The content storedin the work area memory of the DRAM 30 is, for example, a master table(snapshot) obtained by loading various management tables stored in theNAND memory 20 at the time of start-up or a change difference (loginformation) of the management tables stored in the NAND memory 20.

It is possible to use a nonvolatile random access memory such as anFeRAM (Ferroelectric Random Access Memory), an MRAM (MagnetoresistiveRandom Access Memory), and a PRAM (Phase change Random Access Memory)instead of the DRAM 30. When the nonvolatile random access memory isused, it is possible to omit part of or all of operations of savingvarious management tables and the like to the NAND memory 20 at the timeof disconnecting the power supply.

The drive control circuit 4 performs a data transfer control between thehost 1 and the NAND memory 20 via the DRAM 30 and controls eachcomponent in the SSD 100A. Moreover, the drive control circuit 4 has afunction of supplying a status display signal to the state display LED 6and, upon receiving the power-on reset signal from the power supplycircuit 5, supplying a reset signal and a clock signal to each unit inthe drive control circuit 4 and the SSD 100A.

Each NAND memory chip is configured by arranging a plurality of thephysical blocks as a unit of data erasing.

FIG. 2A is a circuit diagram illustrating a configuration example of onephysical block included in the NAND memory chip. Each physical blockincludes (p+1) NAND strings arranged in order along an X direction (p isan integer equal to or larger than 0). Selection transistors ST1included in respective NAND strings are such that drains are connectedto bit lines BL0 to BLp and gates are connected in common to a selectiongate line SGD. Selection transistors ST2 are such that sources areconnected in common to a source line SL and gates are connected incommon to a selection gate line SGS.

Each memory cell transistor (also called memory cell) MCT includes aMOSFET (Metal Oxide Semiconductor Field Effect Transistor) having astacked gate structure formed on a semiconductor substrate. The stackedgate structure includes a charge storage layer (floating gate electrode)formed on the semiconductor substrate via a gate dielectric film and acontrol gate electrode formed on the charge storage layer via aninter-gate dielectric film. In the memory cell transistor MCT, athreshold voltage changes depending on the number of electronsaccumulated in the floating gate electrode and data is stored inaccordance with the difference of this threshold voltage. The memorycell transistor MCT can be configured to store 1 bit or multiple values(data equal to or larger than 2 bits).

The memory cell transistor MCT is not limited to the structure havingthe floating gate electrode and can have a structure, such as a MONOS(Metal-Oxide-Nitride-Oxide-Silicon) type, in which the threshold voltagecan be adjusted by trapping electrons in a nitride film interface as thecharge storage layer. In the similar manner, the memory cell transistorMCT having the MONOS structure can be configured to store 1 bit ormultiple values (data equal to or larger than 2 bits).

In each NAND string, (q+1) memory cell transistors MCT are arranged sothat current paths thereof are connected in series between the source ofthe selection transistor ST1 and the drain of the selection transistorST2. In other words, the memory cell transistors MCT are connected inseries in a Y direction in the form in which adjacent ones share adiffusion region (source region or drain region).

In each NAND string, the control gate electrodes are connected to theword lines WL0 to WLq, respectively, in order from the memory celltransistor MCT located on the most drain side. Therefore, the drain ofthe memory cell transistor MCT connected to the word line WL0 isconnected to the source of the selection transistor ST1, and the sourceof the memory cell transistor MCT connected to the word line WLq isconnected to the drain of the selection transistor ST2.

Each of the word lines WL0 to WLq connects the control gate electrodesof the memory cell transistors MCT in common among the NAND stings inthe physical block. In other words, the control gate electrodes of thememory cell transistors MCT present in the same row in the block areconnected to the same word line WL. (p+1) memory cell transistors MCTconnected to this same word line WL are treated as one page (physicalpage) and data writing and data reading are performed for each physicalpage.

Each of the bit lines BL0 to BLp connects the drains of the selectiontransistors ST1 in common among blocks. In other words, the NAND stringspresent in the same column in a plurality of blocks are connected to thesame bit line BL.

FIG. 2B is a schematic diagram illustrating a threshold distribution,for example, in a quaternary data storage mode for storing 2 bits in onememory cell transistor MCT. In the quaternary data storage mode, any oneof quaternary data “xy” defined by upper page data “x” and lower pagedata “y” can be stored in the memory cell transistor MCT.

As the quaternary data “xy”, for example, pieces of data “11”, “01”,“00”, and “10” are allocated in order of the threshold voltage of thememory cell transistor MCT. The data “11” indicates an erased state inwhich the threshold voltage of the memory cell transistor MCT is, forexample, negative. The allocation rule of data is not limited thereto.The configuration can be such that storage of 3 or more bits isperformed in one memory cell transistor MCT.

In a lower page writing operation, lower bit data “y” is selectivelywritten in the memory cell transistor MCT having the data “11” (erasedstate), so that the data “10” is written. The threshold distribution ofthe data “10” before upper page writing is located about in the middleof the threshold distributions of the data “01” and the data “00” afterthe upper page writing, and can be broader than the thresholddistribution after the upper page writing. In the upper page writingoperation, upper bit data “x” is selectively written in each of thememory cell of the data “11” and the memory cell of the data “10”, sothat the data “01” and the data “00” are written. In a pseudo SLC mode,writing is performed using only the lower page. The lower page writingis faster than the upper page writing.

FIG. 3 is a block diagram illustrating a hardware internal configurationexample of the drive control circuit 4. The drive control circuit 4includes a data access bus 101, a first circuit control bus 102, and asecond circuit control bus 103. A processor 104 that controls the entiredrive control circuit 4 is connected to the first circuit control bus102. A boot ROM 105 is connected to the first circuit control bus 102via a ROM controller 106. In the boot ROM 105, a boot program forbooting each management program (FM: firmware) stored in the NAND memory20 is stored.

Moreover, a clock controller 107 is connected to the first circuitcontrol bus 102. This clock controller 107 receives the power-on resetsignal from the power supply circuit 5 shown in FIG. 1 and supplies thereset signal and the clock signal to each unit.

The second circuit control bus 103 is connected to the first circuitcontrol bus 102. An I²C circuit 108 for receiving data from thetemperature sensor 7 shown in FIG. 1, a parallel IO (PIO) circuit 109that supplies the status display signal to the state display LED 6, anda serial IO (SIO) circuit 110 that controls the RS 232C I/F 3 areconnected to the second circuit control bus 103.

An ATA interface controller (ATA controller) 111, a first ECC (ErrorChecking and Correction) circuit 112, a controller 10A that is a NANDcontroller, and a DRAM controller 114 are connected to both of the dataaccess bus 101 and the first circuit control bus 102. The ATA controller111 transmits and receives data to and from the host 1 via the ATA I/F2. An SRAM 115 that is used as a data work area and a firmware loadingarea is connected to the data access bus 101 via an SRAM controller 116.When the firmware stored in the NAND memory 20 is started, the firmwareis transferred to the SRAM 115 by the boot program stored in the bootROM 105.

The controller 10A includes a NAND I/F 117, a second ECC circuit 118,and a DMA controller 119 for DRAM transfer control. The NAND I/F 117performs interface processing for interface with the NAND memory 20. TheDMA controller 119 for DRAM transfer control performs an access controlbetween the NAND memory 20 and the DRAM 30. The second ECC circuit 118performs encoding of a second correction code or performs encoding anddecoding of a first error correction code. The first ECC circuit 112performs decoding of a second error correction code. The first errorcorrection code and the second error correction code are, for example, aHamming code, a BCH (Bose Chaudhuri Hocquenghem) code, an RS (ReedSolomom) code, or an LDPC (Low Density Parity Check), and a correctionability of the second error correction code is higher than thecorrection ability of the first error correction code.

As shown in FIG. 1, in the NAND memory 20, the four parallel operationelements 20 a to 20 d are connected in parallel to the first ECC circuit112 in the drive control circuit 4 via four channels each for aplurality of bits. Therefore, the four parallel operation elements 20 ato 20 d can be operated in parallel. Moreover, the NAND memory 20 ofeach channel is divided into four banks capable of the bank interleave.Therefore, simultaneous access to the plane 0 and the plane 1 of eachmemory chip can be performed. Thus, eight physical blocks (4 banks×2planes) can be controlled almost simultaneously at a maximum perchannel. In other words, it is possible to perform processing such aswriting to the maximum of eight physical blocks simultaneously.

FIG. 4 is a functional block diagram illustrating one example of oneNAND memory chip (NAND-type flash memory) shown in FIG. 1.

A memory cell array 201 includes a plurality of bit lines, a pluralityof word lines, and a common source line, in which memory cells each ofwhich is composed of, for example, an EEPROM cell and is capable ofelectrically rewriting data are arranged in a matrix manner. A bit linecontrol circuit 202 for controlling the bit line and a word line controlcircuit 206 are connected to this memory cell array 201.

The bit line control circuit 202 reads out data of the memory cell inthe memory cell array 201 via the bit line, detects a state of thememory cell in the memory cell array 201 via the bit line, and performswriting to the memory cell by applying a write control voltage to thememory cell in the memory cell array 201 via the bit line. A columndecoder 203 and a data input/output buffer 204 are connected to the bitline control circuit 202.

A data storage circuit in the bit line control circuit 202 is selectedby the column decoder 203. Data of the memory cell read out to the datastorage circuit is output to the outside from a data input/outputterminal 205 via the data input/output buffer 204. The data input/outputterminal 205 is connected to the drive control circuit 4 outside of thememory chip.

This drive control circuit 4 receives data output from the datainput/output terminal 205. Moreover, the drive control circuit 4 outputsvarious commands CMD that control the operation of the NAND-type flashmemory, an address ADD, and a data DT. Write data input to the datainput/output terminal 205 from the drive control circuit 4 is suppliedto the data storage circuit selected by the column decoder 203 via thedata input/output buffer 204, and a command and an address are suppliedto a control-signal and control-voltage generating circuit 207.

The word line control circuit 206 is connected to the memory cell array201. This word line control circuit 206 selects the word line in thememory cell array 201 and applies a voltage necessary for reading,writing, or erasing to the selected word line.

The memory cell array 201, the bit line control circuit 202, the columndecoder 203, the data input/output buffer 204, and the word line controlcircuit 206 are connected to the control-signal and control-voltagegenerating circuit 207 and are controlled by this control-signal andcontrol-voltage generating circuit 207.

The control-signal and control-voltage generating circuit 207 isconnected to a control signal input terminal 208 and is controlled byvarious control signals, such as ALE (address latch enable), CLE(command latch enable), WE (write enable), input from the drive controlcircuit 4 via the control signal input terminal 208, and the command CMDinput from the drive control circuit 4 via the data input/outputterminal 205 and the data input/output buffer 204.

This control-signal and control-voltage generating circuit 207 generatesa voltage supplied to the word line and the bit line at the time of datawriting and generates a voltage supplied to a well. The control-signaland control-voltage generating circuit 207, for example, includes a bootcircuit such as a charge pump circuit, and can generate a programvoltage, a read voltage, or an erase voltage.

Moreover, as will be described later, the control-signal andcontrol-voltage generating circuit 207 can change the level of the readvoltage. In other words, the control-signal and control-voltagegenerating circuit 207 has a function of receiving various controlsignals input via the control signal input terminal 208 and the commandCMD input via the data input/output terminal 205 and the datainput/output buffer 204 and shifting a voltage applied to the word lineat the time of the read operation to a + direction or a − direction.

The bit line control circuit 202, the column decoder 203, the word linecontrol circuit 206, and the control-signal and control-voltagegenerating circuit 207 constitute a write circuit and a read circuit.

The memory cell array 201 includes a storage area 201-1 that stores anECC (Error Correction Code) in addition to a storage area for storingmain data.

In the SSD 100A, when the number of times of writing or the number oftimes of erasing increases, electrons are trapped in the gate oxide filmof the cell included in the NAND memory 20. Therefore, for removing theelectrons from the gate oxide film at the time of erasing, a largenumber of applications of a high voltage are needed with the increase ofthe number of times of erasing. Moreover, the threshold of the cellappears high due to the electrons trapped in the gate oxide film, sothat writing is finished with a small number of voltage applications.Therefore, a correlation exists between the number of voltageapplications and an actual degradation of the cell, so that the life ofthe NAND memory 20 is detected by utilizing this correlation in thepresent embodiment.

Next, the configuration and the operation of the SSD 100A in the presentembodiment are explained. FIG. 5 is a functional block diagramillustrating a functional configuration example of the SSD as the memorysystem according to the first embodiment of the present invention. TheSSD 100A includes the controller 10A, the NAND memory 20, the DRAM 30,the host I/F 40 for connecting to the host 1, and a warning output unit21.

The NAND memory 20 stores user data specified by the host 1 and storesmanagement information managed in the DRAM 30 for backup. The NANDmemory 20 includes a memory cell array in which a plurality of thememory cells is arranged in a matrix manner, and each memory cell canperform multi-value storage by using the upper page and the lower page.The NAND memory 20 includes a plurality of the NAND memory chips andeach NAND memory chip is configured by arranging a plurality of thephysical blocks as a unit of data erasing. Moreover, in the NAND memory20, data writing and data reading are performed for each physical page.The physical block includes a plurality of the physical pages.

A physical block address is a fixed address allocated to the physicalblock. A logical block address is an address specified from the host 1or a changeable address allocated to a logical block that is a virtualblock. The logical block is, for example, a virtual block constituted bycombining a plurality of the physical blocks.

The DRAM 30 is used as a storage unit for a data transfer and amanagement information recording. Specifically, the storage unit (datatransfer cache region) for the data transfer is used for temporarilystoring data for which a write request is made from the host 1 beforewriting in the NAND memory 20 and reading out data for which a readrequest is issued from the host 1 from the NAND memory 20 andtemporarily storing it. The storage unit for the management informationrecording is used for storing various management information includingmanagement information (such as correlation between logical address andphysical address) for managing a storage position of data stored in theNAND memory 20 and management information (loop count management table31) for managing a writing loop count Lw and an erasing loop count Le tobe described later in physical block unit.

The loop count management table (writing/erasing loop count managementtable) 31 as shown in FIG. 6 is stored in the NAND memory 20, and theloop count management table 31 is read out from the NAND memory 20 andis stored in the DRAM 30 at the time of system start-up. The loop countmanagement table 31 is a table for managing the writing loop count Lwthat is the loop count at the time of writing and the erasing loop countLe that is the loop count at the time of erasing in physical block unit(in physical block address unit). As the writing loop count Lw, the loopcount (worst value) (page whose aging change is the largest) of a pagewith the minimum writing loop count in the physical block is employed asthe writing loop count Lw of the physical block. As the writing loopcount Lw and the erasing loop count Le, the latest loop count that isactually monitored is registered.

The controller 10A performs the data transfer control between the host 1and the NAND memory 20 via the DRAM 30 and includes software thatcontrols each component in the SSD 100A. The controller 10A and the NANDmemory 20 are connected by a control I/O line (Ctrl I/O) for inputtingand outputting a command, an address, data, and the like, and aready/busy signal (Ry/By) indicating whether the NAND memory 20 is in aready state or a busy state is input from the NAND memory 20 to thecontroller 10A. The controller 10A includes a read-and-write controlunit 11, an erasing-loop-count monitoring unit 12, a writing-loop-countmonitoring unit 13, and a life managing unit 14.

The read-and-write control unit 11 performs read and write control ofdata with respect to the NAND memory 20 via a cache region of the DRAM30 based on the management information stored in the DRAM 30.

The erasing-loop-count monitoring unit 12 obtains the erasing loop countLe of each physical block from the NAND memory 20 at each erasing of thephysical block of the NAND memory 20 or at a predetermined cycle orfrequency.

FIG. 7 is a graph illustrating a relationship between the number oftimes of erasing and the erasing loop count Le. This graph is obtainedby averaging inspection data for a plurality of the physical blocks andindicates that the erasing loop count Le is small in the initial statebut increases as the number of times of erasing increases. Therefore,the degradation degree of a block can be recognized from the erasingloop count Le, so that the erasing loop count Le can be used as areference of life determination of the SSD 100A.

FIG. 8 is a time chart illustrating an operation sequence of the eraseprocessing according to the first embodiment. In the erase processing, acommand “60h” indicating erasing, an address, and a command “D0h” areinput via the control I/O line and the erase processing is performed. Aready/busy signal (Ry/By) falls to busy during execution of the eraseprocessing. A predetermined applied voltage is input to the NAND memory20 a plurality of times while gradually increasing the applied voltageduring execution of the erase processing. When the erase processing isfinished, the ready/busy signal (Ry/By) rises to ready. When theerasing-loop-count monitoring unit 12 detects that the ready/busy signal(Ry/By) rises to ready, the erasing-loop-count monitoring unit 12 inputsa command “Loop Count Command” via the control I/O line. In response tothe command “Loop Count Command”, the NAND memory 20 outputs a statussignal (such as the erasing loop count Le and normaltermination/abnormal termination) with respect to the last eraseprocessing.

In the NAND memory 20, the ready/busy signal (Ry/By) after the erasecommand “60h” is input is monitored and the number of voltageapplications to a block of the NAND memory 20 from the time theready/busy signal (Ry/By) falls to busy to the time the ready/busysignal (Ry/By) rises to ready is counted as the erasing loop count Le(erase pulse count), and the NAND memory 20 sends the counted erasingloop count Le to the erasing-loop-count monitoring unit 12 as the statussignal. The erasing-loop-count monitoring unit 12 registers(additionally writes) the erasing loop count Le from the NAND memory 20in an entry of a corresponding physical block in the loop countmanagement table 31.

The writing-loop-count monitoring unit 13 obtains a page writing loopcount Lwp that is the loop count at the time of writing of each physicalpage from the NAND memory 20 at each writing to the physical page or ata predetermined cycle or frequency.

FIG. 9 is a graph illustrating a relationship between the number oftimes of rewriting and the page writing loop count Lwp. This graph isobtained by averaging inspection data for a plurality of the physicalpages and indicates that the page writing loop count Lwp graduallydecreases as the number of times of rewriting increases. Therefore, thedegradation degree of a block can be recognized from the page writingloop count Lwp, so that the page writing loop count Lwp can be used as areference of the life determination of the SSD 100A.

FIG. 10 is a time chart illustrating an operation sequence of the writeprocessing according to the first embodiment. In the write processing, acommand “80h” indicating writing, an address, data, and a command “10h”are input via the control I/O line and the write processing isperformed. The ready/busy signal (Ry/By) falls to busy during executionof the write processing. When the write processing is finished, theready/busy signal (Ry/By) rises to ready. When the writing-loop-countmonitoring unit 13 detects that the ready/busy signal (Ry/By) rises toready, the writing-loop-count monitoring unit 13 inputs the command“Loop Count Command” via the control I/O line. In response to thecommand “Loop Count Command”, the NAND memory 20 outputs a status signal(such as the page writing loop count Lwp and normal termination/abnormaltermination) with respect to the last write processing.

In the NAND memory 20, the ready/busy signal (Ry/By) after the writecommand “80h” is input is monitored and the number of voltageapplications to the memory cell of the NAND memory 20 from the time theready/busy signal (Ry/By) falls to busy to the time the ready/busysignal (Ry/By) rises to ready is counted as the page writing loop countLwp (program pulse count), and the NAND memory 20 sends the counted pagewriting loop count Lwp to the writing-loop-count monitoring unit 13 asthe status signal.

The writing-loop-count monitoring unit 13 receives the page writing loopcount Lwp of each page from the NAND memory 20 and converts the receivedpage writing loop count Lwp of each page into the writing loop count Lwin physical block unit. As a method of determining the writing loopcount Lw in physical block unit, the smallest page writing loop count(page whose aging change is the largest) is employed as the writing loopcount Lw of the physical block. In the writing-loop-count monitoringunit 13, the derived writing loop count Lw is registered in an entry ofa corresponding physical block in the loop count management table 31.

At the time of writing, as shown in FIG. 11, every time a write voltageVpgm is applied to the memory cell, a verifying operation is performedto check whether the writing is performed normally, and when the writingis not performed normally, increase of the write voltage Vpgm and theverifying operation are repeatedly performed until normal writing isperformed or until a time-out. The writing-loop-count monitoring unit 13obtains this loop count as the page writing loop count Lwp.

At the time of erasing, a repeat control of erase voltage applicationand verifying is performed in the similar manner. The erasing-loop-countmonitoring unit 12 obtains the loop count at the erase processing as theerasing loop count Le.

The life managing unit 14 determines the life of the SSD 100A based onregistered data in the loop count management table 31, and, when it isdetermined that the SSD 100A has reached a predetermined degraded state,outputs a warning indication indicating that effect to the host 1 andthe warning output unit 21 as an external device of the SSD 100A. Thelife managing unit 14 determines whether the SSD 100A has reached thepredetermined degraded state at each erasing of the physical block ofthe NAND memory 20 or at a predetermined cycle or frequency.

The life of the SSD 100A can be determined by using any one of thewriting loop count Lw for each block and the erasing loop count Le foreach block. Therefore, when performing the life determination, it isdetermined in advance whether to use any one or both of the writing loopcount Lw and the erasing loop count Le depending on a type of a device.When the life of the SSD 100A is determined by using the writing loopcount Lw, the erasing-loop-count monitoring unit 12 and the erasing loopcount Le in the loop count management table 31 are not needed. When thelife of the SSD 100A is determined by using the erasing loop count Le,the writing-loop-count monitoring unit 13 and the writing loop count Lwin the loop count management table 31 are not needed.

The life managing unit 14 determines whether the SSD 100A has reachedthe predetermined degraded state (life is approaching) by any one of thefollowing determination methods 1 to 8 or a method in which thedetermination methods 1 to 8 are combined.

(Determination Method 1)

The life managing unit 14 calculates the number of the physical blockswhose writing loop count Lw is smaller than a threshold (lower limitWmin to be described later) for a state management used in a statedetermination of each physical block among the physical blocksregistered in the loop count management table 31. In other words, thelife managing unit 14 calculates the number of the physical blocks whosewriting loop count Lw is smaller than the lower limit Wmin among thephysical blocks registered in the loop count management table 31. Whenthe calculated number of the physical blocks becomes larger than athreshold (allowable number of blocks Bnw1 for SSD life determination)for life management used in the life determination of the SSD 100A, thelife managing unit 14 determines that the SSD 100A has reached thepredetermined degraded state.

(Determination Method 2)

When the ratio between the total number of the blocks of the NAND memory20 and the number of the physical blocks calculated by the determinationmethod 1 becomes larger than a threshold (block ratio Brw1 for SSD lifedetermination) (for example, 80%) for the life management used in thelife determination of the SSD 100A, the life managing unit 14 determinesthat the SSD 100A has reached the predetermined degraded state.

(Determination Method 3)

The life managing unit 14 calculates the number of the physical blockswhose erasing loop count Le is larger than a threshold (upper limit Emaxto be described later) for the state management used in the statedetermination of each physical block among the physical blocksregistered in the loop count management table 31. When the calculatednumber of the physical blocks becomes larger than a threshold (allowablenumber of blocks Bne for SSD life determination) for the life managementused in the life determination of the SSD 100A, the life managing unit14 determines that the SSD 100A has reached the predetermined degradedstate.

(Determination Method 4)

When the ratio between the total number of the blocks of the NAND memory20 and the number of the physical blocks calculated by the determinationmethod 3 becomes larger than a threshold (block ratio Bre for SSD lifedetermination) for the life management used in the life determination ofthe SSD 100A, the life managing unit 14 determines that the SSD 100A hasreached the predetermined degraded state.

The total number of the blocks of the NAND memory 20 in thedetermination method 2 and the determination method 4 can be a region inwhich valid physical blocks and a spare region are summed up or can beany one of the valid physical blocks and the spare region. In theNAND-type flash memory, typically, the minimum value of the number ofvalid (Valid/Good) blocks to be ensured over the lifetime of a device isdefined. In this case, the number of blocks in the spare region can bedefined as the number of blocks more than the minimum number of validblocks to be ensured. Alternatively, in the memory system such as theSSD, the physical blocks more than the number appeared as a datacapacity from the outside are provided for management, replacement, andbuffering in some cases. In this case, the number of blocks in the spareregion can be defined as the number of blocks more than the number ofblocks appeared as the data capacity from the outside.

(Determination Method 5)

The life managing unit 14 calculates the average of the writing loopcounts Lw of the physical blocks registered in the loop count managementtable 31. When the calculated average of the writing loop counts Lwbecomes smaller than a threshold (threshold Taw for SSD lifedetermination) for the life management used in the life determination ofthe SSD 100A, the life managing unit 14 determines that the SSD 100A hasreached the predetermined degraded state.

(Determination Method 6)

The life managing unit 14 calculates the average of the erasing loopcounts Le of the physical blocks registered in the loop count managementtable 31. When the calculated average of the erasing loop counts Lebecomes larger than a threshold (threshold Tae for SSD lifedetermination) for the life management used in the life determination ofthe SSD 100A, the life managing unit 14 determines that the SSD 100A hasreached the predetermined degraded state.

(Determination Method 7)

The life managing unit 14 calculates the minimum value or the maximumvalue of the writing loop count Lw from among the writing loop counts Lwof the physical blocks registered in the loop count management table 31.When the calculated minimum value or maximum value of the writing loopcount Lw becomes smaller than a threshold (threshold Tmw for SSD lifedetermination) for the life management used in the life determination ofthe SSD 100A, the life managing unit 14 determines that the SSD 100A hasreached the predetermined degraded state. Whereby, it is possible todetermine that the SSD 100A has reached the life thereof based oncomparison of the physical block whose aging degradation is determinedto be the smallest or the physical block whose aging degradation isdetermined to be the largest based on the writing loop counts Lw and thethreshold for the life management.

(Determination Method 8)

The life managing unit 14 calculates the minimum value or the maximumvalue of the erasing loop count Le from among the erasing loop counts Leof the physical blocks registered in the loop count management table 31.When the calculated minimum value or maximum value of the erasing loopcount Le becomes larger than a threshold (threshold Tme for SSD lifedetermination) for the life management used in the life determination ofthe SSD 100A, the life managing unit 14 determines that the SSD 100A hasreached the predetermined degraded state. Whereby, it is possible todetermine that the SSD 100A has reached the life thereof based oncomparison of the physical block whose aging degradation is determinedto be the smallest or the physical block whose aging degradation isdetermined to be the largest based on the erasing loop counts Le and thethreshold for the life management.

The warning output unit 21 is, for example, a display device such as aliquid crystal monitor. The warning output unit 21 can be an audiooutput device or an illumination device such as an LED (Light EmittingDiode). When the warning output unit 21 is the audio output device, thewarning output unit 21 outputs warning by audio output, and when thewarning output unit 21 is the illumination device, the warning outputunit 21 outputs warning by lighting or flashing the illumination device.

Next, a life determination processing procedure of the SSD 100A by theSSD 100A itself is explained. FIG. 12 is a flowchart illustrating thelife determination processing procedure of the SSD according to thefirst embodiment. In this example, explanation is given for the case ofperforming the life determination of the SSD 100A based on the erasingloop count Le; however, the life determination of the SSD 100A can beperformed by the similar processing procedure in the case of performingthe life determination of the SSD 100A based on the writing loop countLw.

The erase processing between the host 1 and the SSD 100A is performed inaccordance with the operation sequence of the erase processing shown inFIG. 8. Specifically, an erase instruction is sent from the controller10A to the NAND memory 20, and the erase instruction is input to theNAND memory 20 (Step S110). Whereby, the erase processing of data isperformed on a block specified by the erase instruction from thecontroller 10A among the blocks of the NAND memory 20 (Step S120).

In the erase processing, the erasing-loop-count monitoring unit 12detects the number of voltage applications to the block that is an erasetarget as the erasing loop count Le (Step S130), and registers thedetected erasing loop count Le in the entry of a corresponding physicalblock in the loop count management table 31. Whereby, the loop countmanagement table 31 is updated (Step S140).

Thereafter, the life managing unit 14 determines the life of the SSD100A based on registered data in the loop count management table 31. Inother words, the SSD 100A itself performs the life determination of theSSD 100A (Step S150). The life managing unit 14 in the presentembodiment determines whether the SSD 100A has reached the predetermineddegraded state by any of the above described determination methods 1 to8.

In this example, explanation is given for the case where the lifemanaging unit 14 determines whether the SSD 100A has reached thepredetermined degraded state by using the above described determinationmethod 1 or 3. The life managing unit 14 determines whether the NANDmemory 20 has reached the predetermined degraded state by using athreshold (block threshold information 32 to be described later) for thestate management used in the state determination for each physicalblock.

FIG. 13 is a diagram illustrating the block threshold information usedin the state determination of a block. In the NAND memory 20, athreshold (allowable range) used for determining the degraded state ofthe SSD 100A is registered in advance in the block threshold information32.

The lower limit Wmin and the upper limit Wmax are registered in theblock threshold information 32 as the allowable range of the writingloop count Lw. Moreover, a lower limit Emin and an upper limit Emax areregistered in the block threshold information 32 as the allowable rangeof the erasing loop count Le. The allowable range of the writing loopcount Lw and the allowable range of the erasing loop count Le are set inadvance by referring to device characteristics and the like of the NANDmemory 20 (memory element).

The life managing unit 14, for example, refers to the block thresholdinformation 32 and determines the life of the SSD 100A in accordancewith the determination method 1. In this case, the life managing unit 14calculates the sum value of the number of the physical blocks whosewriting loop count Lw is smaller than the lower limit Wmin and thenumber of the physical blocks whose writing loop count Lw is larger thanthe upper limit Wmax (for example, the writing loop count Lw at theinitial state) among the physical blocks registered in the loop countmanagement table 31.

In the present embodiment, the number of the physical blocks whosewriting loop count Lw is larger than the upper limit Wmax is used forthe life determination of the SSD 100A in addition to the lower limitWmin. This is because it is highly likely that a block whose writingloop count Lw is larger than the upper limit Wmax has some abnormality.

The life managing unit 14 determines whether the calculated total numberof the physical blocks is within the allowable range (Step S160).Specifically, the life managing unit 14 determines that the SSD 100A hasreached the predetermined degraded state when the calculated totalnumber of the physical blocks becomes larger than the allowable numberof blocks Bnw1 for SSD life determination.

When the life managing unit 14 determines that the SSD 100A has reachedthe predetermined degraded state, the life managing unit 14 outputswarning indicating that effect to the warning output unit 21 and thelike. In other words, when the calculated total number of the physicalblocks is not within the allowable range (No at Step S160), the lifemanaging unit 14 outputs warning to the warning output unit 21 and thelike (Step S170). On the other hand, when the calculated total number ofthe physical blocks is within the allowable range (Yes at Step S160),the life managing unit 14 ends the life determination without outputtingthe warning.

Moreover, for example, the life managing unit 14 can refer to the blockthreshold information 32 and determine the life of the SSD 100A inaccordance with the determination method 3. In this case, the lifemanaging unit 14 calculates the sum value of the number of the physicalblocks whose erasing loop count Le is smaller than the lower limit Emin(for example, the erasing loop count Le at the initial state) and thenumber of the physical blocks whose erasing loop count Le is larger thanthe upper limit Emax among the physical blocks registered in the loopcount management table 31.

In the present embodiment, the number of the physical blocks whoseerasing loop count Le is smaller than the lower limit Emin is used forthe life determination of the SSD 100A in addition to the upper limitEmax. This is because it is highly likely that a block whose erasingloop count Le is smaller than the lower limit Emin has some abnormality.

The life managing unit 14 determines that the SSD 100A has reached thepredetermined degraded state when the calculated total number of thephysical blocks becomes larger than the allowable number of blocks Bnefor SSD life determination. When the life managing unit 14 determinesthat the SSD 100A has reached the predetermined degraded state, the lifemanaging unit 14 outputs warning indicating that effect to the warningoutput unit 21 and the like.

When the life determination of the SSD 100A is performed by thedetermination method 1, 2, 5, or 7, the lower limit Emin and the upperlimit Emax of the erasing loop count Le are not needed. When the lifedetermination of the SSD 100A is performed by the determination methods3, 4, 6, or 8, the lower limit Wmin and the upper limit Wmax of thewriting loop count Lw are not needed.

Moreover, it is applicable to perform the life determination of the SSD100A based on the number of the physical blocks whose writing loop countLw is smaller than the lower limit Wmin without using the number of thephysical blocks whose writing loop count Lw is larger than the upperlimit Wmax. In this case, the upper limit Wmax of the writing loop countLw is not needed.

Furthermore, it is applicable to perform the life determination of theSSD 100A based on the number of the physical blocks whose erasing loopcount Le is larger than the upper limit Emax without using the number ofthe physical blocks whose erasing loop count Le is smaller than thelower limit Emin. In this case, the lower limit Emin of the erasing loopcount Le is not needed.

Moreover, in the present embodiment, the case is explained in which thewriting loop count Lw is the worst value of the loop count at the timeof writing; however, the page writing loop count Lwp of a predeterminedphysical page can be set to the writing loop count Lw of the physicalblock.

Furthermore, the life managing unit 14 can determine the life of the SSD100A by a method other than the above described determination methods 1to 8. Moreover, the loop count management table 31 and the blockthreshold information 32 can be stored in the NAND memory 20 or the DRAM30. Furthermore, in the present embodiment, the case is explained inwhich the warning output unit 21 is arranged outside the SSD 100A;however, the warning output unit 21 can be arranged in the SSD 100A.

Moreover, the type of the command and the command number used in theerase processing and the write processing explained in FIG. 8, FIG. 10,and the like are one example, and the erase processing and the writeprocessing can be performed by other commands.

In this manner, in the first embodiment, the life of the SSD 100A isdetermined based on the erasing loop count Le and/or the writing loopcount Lw that are actually monitored, correct life determination can beperformed without depending on variation between lots, individuals,blocks, and the like. Accordingly, the degraded state of the wholenonvolatile semiconductor memory that includes a plurality of blocks canbe correctly detected.

Moreover, because the controller 10A includes the life managing unit 14,the SSD 100A can determine the life of the SSD 100A by itself.Furthermore, because the SSD 100A itself outputs the warning indicationrelated to the life of the SSD 100A, it is possible to notify a user ofwarning related to the life of the SSD 100A while reducing the load onthe host 1.

Second Embodiment

Next, the memory system according to the second embodiment is explained.In the second embodiment, the loop count management table 31 is sentfrom the SSD (SSD 100B to be described later) to the host 1 that is anexternal device and the host 1 performs the life determination of theSSD 100B.

FIG. 14 is a functional block diagram illustrating a functionalconfiguration example of the SSD according to the second embodiment ofthe present invention. Components that achieve the same function as theSSD 100A shown in FIG. 5 among components in FIG. 14 are given the samereference numerals and overlapping explanation is omitted. The host 1 inthe present embodiment includes a life managing unit 16. The lifemanaging unit 16 has a function similar to the life managing unit 14included in the SSD 100A explained in the first embodiment.

The SSD 100B as the memory system shown in FIG. 14 includes a controller10B, the NAND memory 20, the DRAM 30, and the host I/F 40. Thecontroller 10B has a function approximately similar to the controller10A, and is different from the controller 10A in that the controller 10Bdoes not include the life managing unit 14 but includes a life notifyingunit 15. Specifically, the controller 10B includes the read-and-writecontrol unit 11, the erasing-loop-count monitoring unit 12, thewriting-loop-count monitoring unit 13, and the life notifying unit 15.

When a request for the loop count management table 31 is issued from thehost 1, the life notifying unit 15 of the SSD 100B reads out the loopcount management table 31 from the NAND memory 20 and sends it to thehost 1. The request for the loop count management table 31 from the host1 to the SSD 100B is made, for example, by a SMART (Self-MonitoringAnalysis and Reporting Technology) command. The SMART command is arequest command for the host 1 extracting the state of the NAND memory20 and the like. The host 1 can read out the loop count management table31 from the NAND memory 20 via the DRAM 30.

Next, the life determination processing procedure of the SSD 100B by thehost 1 is explained. FIG. 15 is a flowchart illustrating the lifedetermination processing procedure of the SSD according to the secondembodiment. In the processing procedure in FIG. 15, overlappingexplanation is omitted for the processing procedure similar to theprocessing procedure shown in FIG. 12.

In the processing shown in FIG. 15, processing from input processing ofan erase instruction from the controller 10B to the NAND memory 20 toupdate processing of the loop count management table 31 is similar tothe processing shown in FIG. 12. In other words, processing at StepsS210 to S240 shown in FIG. 15 is similar to the processing at Step S110to S140 shown in FIG. 12.

The host 1 makes a request for the loop count management table 31 to theSSD 100B at an arbitrary timing. When the request for the loop countmanagement table 31 is issued from the host 1, the life notifying unit15 reads out the loop count management table 31 from the NAND memory 20and transmits it to the host 1 (Step S250). The life managing unit 16 ofthe host 1 performs the life determination of the SSD 100B by theprocessing similar to the life managing unit 14 explained in the firstembodiment (Step S260). Then, when the degraded state of the SSD 100B isnot within the allowable range (No at Step S270), warning is output tothe warning output unit 21 (not shown in FIG. 14) and the like (StepS280). On the other hand, when the degraded state of the SSD 100B iswithin the allowable range (Yes at Step S270), the life managing unit 16ends the life determination without outputting the warning.

Information on the loop count at the time of writing registered in theloop count management table 31 is not limited to the writing loop countLw that is the worst value (minimum value) of the loop count at the timeof writing.

FIG. 16 is a diagram illustrating another configuration example of theloop count management table. A loop count management table 33 is a tablefor managing a writing loop count average value La that is the averageof the page writing loop counts Lwp in a block, the number of writtenpages P that is the number of written pages in a block, and the erasingloop count Le, in physical block unit. As the writing loop count averagevalue La, the number of written pages P, and the erasing loop count Le,the latest loop count and number of pages that are actually monitoredare registered.

Data writing is performed on each block in page unit. Therefore, evenwhen writing to a new page is performed, a new writing loop countaverage value La can be easily calculated by storing the writing loopcount average value La and the number of written pages P in the loopcount management table 33.

Explanation is given for the life determination processing of the SSD100B using the loop count management table 33. The host 1 determineswhether the SSD 100B has reached the predetermined degraded state (lifeis approaching) by any of the following determination methods 9 and 10or a method in which the determination methods 9 and 10 are combined.

(Determination Method 9)

The life managing unit 16 calculates the number of the physical blockswhose writing loop count average value La is smaller than a threshold(threshold Aw for average value) for the state management used in thestate determination of each physical block among the physical blocksregistered in the loop count management table 33. When the calculatednumber of the physical blocks becomes larger than a threshold (allowablenumber of blocks Bnw2 for SSD life determination) for the lifemanagement used in the life determination of the SSD 100B, the lifemanaging unit 16 determines that the SSD 100B has reached thepredetermined degraded state.

(Determination Method 10)

When the ratio between the total number of the blocks of the NAND memory20 and the number of the physical blocks calculated by the determinationmethod 9 becomes larger than a threshold (block ratio Brw2 for SSD lifedetermination) for the life management used in the life determination ofthe SSD 100B, the life managing unit 16 determines that the SSD 100B hasreached the predetermined degraded state.

The life managing unit 16 can determine the life of the SSD 100B byusing the determination methods 5 and 6 or can determine the life of theSSD 100B by a method in which the determination methods 1 to 10 arecombined. When the life managing unit 14 of the SSD 100A performs thelife determination of the SSD 100A by using the loop count managementtable 33, the life determination is performed by a method similar to thelife determination of the SSD 100B by the host 1.

Moreover, each of the allowable range of the writing loop count Lw andthe allowable range of the erasing loop count Le used in the statedetermination of each physical block is not limited to one but can betwo or more. When N (N is a natural number) allowable ranges are used,the state determination of N stages can be performed. Specifically, thelife managing unit 16 determines which degraded stage the degraded stateof each physical block is in among a plurality of degraded stagescorrelated with the allowable ranges, respectively, based on whichallowable range the degraded state is in among the N allowable ranges.In this example, explanation is given for the case where two allowableranges are set for each loop count. For example, a first allowable rangeand a second allowable range are set in advance for the writing loopcount Lw. Then, when the writing loop count Lw exceeds the firstallowable range, it is determined that the state of the physical blockis degraded a little. Moreover, when the writing loop count Lw exceedsthe second allowable range, it is determined that the state of thephysical block is degraded greatly.

FIG. 17 is a diagram illustrating block threshold information when thestate determination of a block is performed in two stages. In blockthreshold information 34, a first lower limit Wmin1, a first upper limitWmax1, a second lower limit Wmin2, and a second upper limit Wmax2 areregistered as the allowable ranges of the writing loop count Lw. In theblock threshold information 32, a first lower limit Emin1, a first upperlimit Emax1, a second lower limit Emin2, and a second upper limit Emax2are registered as the allowable ranges of the erasing loop count Le.

In the allowable range of the writing loop count Lw, the second lowerlimit Wmin2 is a condition severer than the first lower limit Wmin1 andthe second upper limit Wmax2 is a condition severer than the first upperlimit Wmax1. In the allowable range of the erasing loop count Le, thesecond lower limit Emin2 is a condition severer than the first lowerlimit Emin1 and the second upper limit Emax2 is a condition severer thanthe first upper limit Emax1.

For example, the life managing unit 16 refers to the block thresholdinformation 34 and determines the life of the SSD 100B in accordancewith the determination method 1. In this case, the life managing unit 16calculates the sum value of the number of the physical blocks whosewriting loop count Lw is smaller than the first lower limit Wmin1 andthe number of the physical blocks whose writing loop count Lw is largerthan the first upper limit Wmax1 among the physical blocks registered inthe loop count management table 31.

When the calculated total number of the physical blocks is larger thanthe allowable number of blocks Bnw1 for SSD life determination, the lifemanaging unit 16 determines that the degraded state of the SSD 100B hasreached the degraded state of the first stage.

Moreover, the life managing unit 16 calculates the sum value of thenumber of the physical blocks whose writing loop count Lw is smallerthan the second lower limit Wmin2 and the number of the physical blockswhose writing loop count Lw is larger than the second upper limit Wmax2among the physical blocks registered in the loop count management table31.

When the calculated total number of the physical blocks is larger thanthe allowable number of blocks Bnw1 for SSD life determination, the lifemanaging unit 16 determines that the degraded state of the SSD 100B hasreached the degraded state of the second stage (state in whichdegradation has progressed more than the first stage).

In this example, explanation is given for the case of setting aplurality of the allowable ranges of the writing loop count Lw and aplurality of the allowable ranges of the erasing loop count Le used forthe state determination of each physical block; however, a plurality ofthresholds (such as the allowable number of blocks Bnw1 for SSD lifedetermination) for the life management used in the life determination ofthe SSD 100B can be set. For example, when the number of the physicalblocks calculated by the determination method 1 is larger than the firstthreshold for the life management used in the life determination of theSSD 100B, it is determined that the degraded state of the SSD 100B hasreached the first stage. When the number of the physical blockscalculated by the determination method 1 is larger than the secondthreshold for the life management used in the life determination of theSSD 100B, it is determined that the degraded state of the SSD 100B hasreached the second stage (state in which the life becomes shorter thanthe first stage).

In the present embodiment, the configuration is such that the host 1includes the life managing unit 16; however, the life managing unit 16can be included in an external device other than the host 1. Moreover,when the life determination of the SSD 100A is performed by the lifemanaging unit 14 using the block threshold information 34, the lifemanaging unit 14 performs the life determination of the SSD 100A by theprocessing similar to the above host 1.

In this manner, in the second embodiment, because the SSD 100B includesthe life notifying unit 15, the loop count management table 31 can betransmitted to the host 1. Moreover, because the host 1 includes thelife managing unit 16, the host 1 can determine the life of the SSD100B. Furthermore, a plurality of the allowable ranges of the erasingloop count Le and a plurality of the allowable ranges of the writingloop count Lw used in the state determination of each physical block areset, so that the degraded state of the SSD 100B can be managed indetail.

In this manner, according to the first embodiment and the secondembodiment, the degraded state of the whole nonvolatile semiconductormemory can be detected correctly.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A system comprising: a memory; and a managementunit configured to determine a state of the memory, wherein the memorycomprises: a first semiconductor nonvolatile memory configured to storedata, the first semiconductor nonvolatile memory including a first areaand a second area, the first area storing data from a host and thesecond area including blocks for at least one of management,replacement, and buffering; and a second semiconductor nonvolatilememory configured to store management information of the firstsemiconductor nonvolatile memory, the management information of thefirst semiconductor nonvolatile memory including management informationof the second area, wherein the second semiconductor nonvolatile memoryis configured to store a number of blocks related to degradation in thesecond area of the memory, and the management unit is configured tocause a display device to display a warning when the number of blocksrelated to the degradation in the second area reaches a first threshold.2. The system according to claim 1, wherein the memory furthercomprises: a temperature sensor configured to detect temperature and tooutput temperature information.
 3. The system according to claim 1,wherein the memory further comprises: an LED configured to indicatestatus of the memory.
 4. The system according to claim 1, wherein thefirst area includes a valid physical block, the valid physical blockbeing a physical block that is ensured over a lifetime of the system,and the second area includes a physical block other than the validphysical block.
 5. The system according to claim 1, wherein a number ofblocks in the second area is more than a number of blocks that arevisible from an outside as a data capacity.
 6. The system according toclaim 1, wherein the memory is configured to store the managementinformation of the first semiconductor nonvolatile memory, themanagement information of the first semiconductor nonvolatile memoryincludes first information and second information, the first informationis related to a total capacity of the first semiconductor nonvolatilememory, and the second information is related to an amount of datawritten to the first semiconductor nonvolatile memory, and themanagement unit is configured to calculate a ratio of the first andsecond information and is configured to cause the display device todisplay the ratio.
 7. The system according to claim 1, wherein themanagement unit includes a writing-loop-count monitoring unit and a lifemanaging unit, the writing-loop-count monitoring unit monitors, as awriting loop count, a loop count of a voltage applied to the firstsemiconductor nonvolatile memory in writing data to the firstsemiconductor nonvolatile memory, and the life managing unit counts, onthe basis of the writing loop count, the number of blocks related to thedegradation in the second area.
 8. The system according to claim 7,wherein the life managing unit counts, on the basis of a number ofblocks that have the writing loop count smaller than a predeterminedthreshold, the number of blocks related to the degradation in the secondarea.
 9. The system according to claim 7, wherein at least one blockincludes a plurality of pages, the plurality of pages being units ofdata writing and data reading, and the writing-loop-count monitoringunit employs, as the writing loop count, a writing loop count of a pagethat has a smallest writing loop count in the block.
 10. The systemaccording to claim 1, wherein the management unit includes awriting-loop-count monitoring unit and a life managing unit, thewriting-loop-count monitoring unit monitors, as a writing loop count, aloop count of a voltage applied to the first semiconductor nonvolatilememory in writing data to the first semiconductor nonvolatile memory,and the life managing unit determines, on the basis of the writing loopcount, a degraded state of the first semiconductor nonvolatile memory.11. The system according to claim 10, wherein the life managing unitdetermines, on the basis of a number of blocks that have the writingloop count smaller than a predetermined threshold, the degraded state ofthe first semiconductor nonvolatile memory.
 12. The system according toclaim 1, wherein the management unit includes an erasing-loop-countmonitoring unit and a life managing unit, the erasing-loop-countmonitoring unit monitors, as an erasing loop count, a loop count of avoltage applied to the first semiconductor nonvolatile memory in erasingdata from the first semiconductor nonvolatile memory, and the lifemanaging unit counts, on the basis of the erasing loop count, the numberof blocks related to the degradation in the second area.
 13. The systemaccording to claim 12, wherein the life managing unit counts, on thebasis of a number of blocks that have the erasing loop count larger thana predetermined threshold, the number of blocks related to thedegradation in the second area.
 14. The system according to claim 1,wherein the first semiconductor nonvolatile memory is a NAND-type flashmemory, and the system is an SSD.
 15. The system according to claim 1,wherein the first semiconductor nonvolatile memory includes a pluralityof chips.
 16. The system according to claim 1, wherein in data writingor in data erasing, a voltage is applied to the first semiconductornonvolatile memory a plurality of times while the voltage is graduallyincreased.
 17. The system according to claim 1, wherein a life managingunit outputs, to the display device, a warning indication, and thedisplay device displays the warning.
 18. The system according to claim1, wherein when a request is issued from the host, the management unittransmits, to the host, the management information of the firstsemiconductor nonvolatile memory.
 19. The system according to claim 1,wherein the system is configured to be capable of transmitting andreceiving data to and from a device for debugging and manufactureinspection via a communication interface.
 20. The system according toclaim 14, wherein the NAND-type flash memory includes a plurality ofparallel operation elements that performs parallel operations, theplurality of parallel operation elements being connected to a drivecontrol circuit by a plurality of channels, the parallel operationelement including a plurality of banks.
 21. The system according toclaim 15, wherein at least one chip includes a plurality of planes, andone of erasing, writing, and reading can be performed simultaneously onthe plurality of planes.
 22. The system according to claim 1, wherein atleast one block is a unit of data erasing.
 23. The system according toclaim 1, wherein, in data writing, every time a write voltage is appliedto a memory cell of the memory, a verifying operation is performed tocheck whether the writing is performed normally, and when the writing isnot performed normally, increase of the write voltage and the verifyingoperation are repeatedly performed until normal writing is performed oruntil a time-out.
 24. The system according to claim 1, wherein in dataerasing, every time an erase voltage is applied to a memory cell of thememory, a verifying operation is performed to check whether the erasingis performed normally, and when the erasing is not performed normally,increase of the erase voltage and the verifying operation are repeatedlyperformed until normal erasing is performed or until a time-out.
 25. Asystem comprising: a memory; and a management unit, wherein the memorycomprises: a first semiconductor nonvolatile memory configured to storedata, the first semiconductor nonvolatile memory including a first areaand a second area, the first area storing data from a host and thesecond area including blocks for at least one of management,replacement, and buffering; and a second semiconductor nonvolatilememory configured to store a number of blocks related to degradation inthe second area of the memory, and the management unit is configured tocause a display device to display a warning when the number of blocksrelated to the degradation in the second area reaches a first threshold.26. The system according to claim 25, wherein the management unitincludes a writing-loop-count monitoring unit and a life managing unit,the writing-loop-count monitoring unit monitors, as a writing loopcount, a loop count of a voltage applied to the first semiconductornonvolatile memory in writing data to the first semiconductornonvolatile memory, and the life managing unit counts, on the basis ofthe writing loop count, the number of blocks related to the degradationin the second area.
 27. The system according to claim 26, wherein thelife managing unit counts, on the basis of a number of blocks that havethe writing loop count smaller than a predetermined threshold, thenumber of blocks related to the degradation in the second area.
 28. Thesystem according to claim 26, wherein at least one block includes aplurality of pages, the plurality of pages being units of data writingand data reading, and the writing-loop-count monitoring unit employs, asthe writing loop count, a writing loop count of a page that has asmallest writing loop count in the block.
 29. The system according toclaim 25, wherein the management unit includes a writing-loop-countmonitoring unit and a life managing unit, the writing-loop-countmonitoring unit monitors, as a writing loop count, a loop count of avoltage applied to the first semiconductor nonvolatile memory in writingdata to the first semiconductor nonvolatile memory, and the lifemanaging unit determines, on the basis of the writing loop count, adegraded state of the first semiconductor nonvolatile memory.
 30. Thesystem according to claim 29, wherein the life managing unit determines,on the basis of a number of blocks that have the writing loop countsmaller than a predetermined threshold, the degraded state of the firstsemiconductor nonvolatile memory.
 31. The system according to claim 25,wherein the management unit includes an erasing-loop-count monitoringunit and a life managing unit, the erasing-loop-count monitoring unitmonitors, as an erasing loop count, a loop count of a voltage applied tothe first semiconductor nonvolatile memory in erasing data from thefirst semiconductor nonvolatile memory, and the life managing unitcounts, on the basis of the erasing loop count, the number of blocksrelated to the degradation in the second area.
 32. The system accordingto claim 31, wherein the life managing unit counts, on the basis of anumber of blocks that have the erasing loop count larger than apredetermined threshold, the number of blocks related to the degradationin the second area.
 33. The system according to claim 25, wherein thefirst semiconductor nonvolatile memory is a NAND-type flash memory, andthe system is an SSD.
 34. The system according to claim 25, wherein thefirst semiconductor nonvolatile memory includes a plurality of chips.35. The system according to claim 25, wherein in data writing or in dataerasing, a voltage is applied to the first semiconductor nonvolatilememory a plurality of times while the voltage is gradually increased.36. The system according to claim 25, wherein the life managing unitoutputs, to the display device, a warning indication, and the displaydevice displays the warning.
 37. The system according to claim 25,wherein the second semiconductor nonvolatile memory is configured tostore management information of the first semiconductor nonvolatilememory, and when a request is issued from the host, the management unittransmits, to the host, the management information of the firstsemiconductor nonvolatile memory.
 38. The system according to claim 25,wherein the system is configured to be capable of transmitting andreceiving data to and from a device for debugging and manufactureinspection via a communication interface.
 39. The system according toclaim 33, wherein the NAND-type flash memory includes a plurality ofparallel operation elements that performs parallel operations, theplurality of parallel operation elements being connected to a drivecontrol circuit by a plurality of channels, the parallel operationelement including a plurality of banks.
 40. The system according toclaim 34, wherein at least one chip includes a plurality of planes, andone of erasing, writing, and reading can be performed simultaneously onthe plurality of planes.
 41. The system according to claim 25, whereinat least one block is a unit of data erasing.
 42. The system accordingto claim 25, wherein in data writing, every time a write voltage isapplied to a memory cell of the memory, a verifying operation isperformed to check whether the writing is performed normally, and whenthe writing is not performed normally, increase of the write voltage andthe verifying operation are repeatedly performed until normal writing isperformed or until a time-out.
 43. The system according to claim 25,wherein in data erasing, every time an erase voltage is applied to amemory cell of the memory, a verifying operation is performed to checkwhether the erasing is performed normally, and when the erasing is notperformed normally, increase of the erase voltage and the verifyingoperation are repeatedly performed until normal erasing is performed oruntil a time-out.